Mismatch of lateral field metal-oxide-metal capacitors in a 180-nm CMOS process. http://dx.doi.org/10.1049/el.2011.3804Revista : Electronics Letters
Volumen : 48
Número : 5
Páginas : 286-287
Tipo de publicación : ISI Ir a publicación
Metal-oxide-metal (MOM) capacitors represent an attractive alternative to metal-insulator-metal (MIM) capacitors in mixed-signal integrated circuits. Since they are made of metal lines, they can be integrated in standard CMOS processes, and tailored over a wide range of sizes. Mismatch data of MOM capacitors, however, is scarce and typically conservative. This paper presents the design and test results of a custom ADC that employs an array of 1024 MOM capacitors sized at 2 fF. Static performance metrics are presented and compared with those for an ADC based on MIM capacitors. Mismatch data is computed from the results.